We present an in-depth investigation of the interpad (IP) gap region in the ultra-fast silicon detector (UFSD) Type 10, utilizing a femtosecond laser beam and the transient current technique (TCT) as probing instruments. The sensor, fabricated in the trench-isolated TI-LGAD RD50 production batch at the FBK Foundry, enables a direct comparison between TI-LGAD and standard UFSD structures. This research aims to elucidate the isolation structure in the IP region and measure the IP distance between...
