ABSTRACT
The diode–series–parallel resistance circuit, which includes both series and shunt (parasitic) resistances, represents a generalized framework for diode‐based electrical models with broad applicability in electronics and power engineering. This paper presents analytical and approximate solutions for this circuit, utilizing the
g
‐function. To the best of our knowledge, this is the first application of the
g
‐function to the generalized diode–series–parallel resistance circuit, extending its usability beyond solar cell configurations. Furthermore, the approximate solutions are derived through Halley's iterative procedure and Newton's method, offering an efficient and systematic approach to solving such nonlinear systems. By comparing the proposed solutions with existing literature and validating them through MATLAB/SIMSCAPE simulations as well as experimental measurements conducted in the laboratory, the results underscore the effectiveness and applicability of the proposed techniques. These findings provide valuable insights into the accurate and robust modeling of the generalized diode–series–parallel resistance circuit.
