In this contribution, we explored the interplay of guard ring (GR) configuration and isolation structures, as well as irradiation effects, which all together create a rich landscape of phenomena such as self-induced signals (“ghosts”) in trench-isolated Low-Gain Avalanche Diodes (TI-LGADs). The ghost effect is related to the increased surface current due to presence of SiO2 trenches (and defects) in studied diodes, but it is also affected by interplay between the guard ring(s) and the n+ bias ring,...
We present an in-depth investigation of the interpad (IP) gap region in the ultra-fast silicon detector (UFSD) Type 10, utilizing a femtosecond laser beam and the transient current technique (TCT) as probing instruments. The sensor, fabricated in the trench-isolated TI-LGAD RD50 production batch at the FBK Foundry, enables a direct comparison between TI-LGAD and standard UFSD structures. This research aims to elucidate the isolation structure in the IP region and measure the IP distance between...
